Abstract
Power diodes with low turn-on voltage and high breakdown voltage are highly demanded in order to improve the power conversion efficiency for different applicants. This paper focused on the comparison between the two structures GaN-Schottky barrier diode (SBD), with and without recessed anode schemes, which are utilized with different cathode-to-anode separations (L AC ). The electrical characteristics of these devices are illustrated, the turn-on voltage (V T ) and breakdown voltage (BV) are compared under the related L AC . The best performance is found with the recessed anode SBD which gives a turn-on voltage of 0.75 V, a BV of 462 V.
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