Experimental characterization of the dominant multiple nodes charge collection mechanism in metal oxide-semiconductor transistors

Abstract

We propose an experimental method to investigate the dominant multiple node charge collection mechanism. A transistor array-based test structure is used to distinguish charge collection owing to the drift-diffusion and parasitic bipolar amplification effect. Heavy ion experimental results confirm that drift-diffusion dominates multiple node charge collection at low linear energy transfer (LET). However, the parasitic bipolar amplification effect dominates it at high LET. We also propose simple equations to determine the critical LET which may change the dominant multiple node charge collection mechanism. The calculated LET value is consistent with the heavy ion experimental results.