Abstract
AbstractCurrent–voltage, radio‐frequency (RF) and noise characteristics of single‐wall multi‐tube carbon nanotube (CNT) transistors were measured at cryogenic temperatures. Compared to an ambient temperature (Ta) of 300 K, only a slight drain current increase at Ta = 77 K was observed. In addition, a weak dependence of the maximum value of the current gain cut‐off frequency (fT) on Ta was obtained, indicating that fT is rather limited by the device intrinsic quantum and extrinsic capacitances than by an improved mobility due to reduced optical phonon scattering at low Ta. A noise analysis of the devices at Ta = 10 K reveals that the noise factor (NF) improvement at very low temperatures is related to the reduced Nyquist noise of all resistive transistor noise contributors. Since the main noise source in CNTFETs is the shot noise, NF remains comparatively high even at Ta = 10 K.magnified imagePhoto of the CNTFET embedded in RF pads (left) and schematic layout of the CNTFET (right).(© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: physica status solidi (RRL) – Rapid Research Letters
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
