Experimental characterization of monocrystalline Si targets implanted with Sb + ions

Abstract

Monocrystalline silicon targets were submitted to a beam of antimony ions. The Si(1 1 1) substrates were implanted at an energy of 120 keV, at room temperature, to a dose varying from 1×10 15 to 5×10 15 Sb + cm −2. To recover the radiation defects generated by Sb + ions, a thermal annealing was performed, at 900 °C for 30 min under very high vacuum. The study of antimony ion implantation in the monocrystalline silicon targets was performed by means of different experimental techniques: X-ray diffraction, optical and electrical measurements. The perturbations enhanced by Sb + ion implantation and the recovery of the damage were investigated with great interest. Although the selected techniques are not frequently applied to investigate such phenomena, they have provided important results. In as-implanted specimens, it was found that the radiation damage increased with the increase of antimony dose. After the annealing treatment, a good recovery of defects was obtained especially in the samples implanted with the low dose (i.e. 1×10 15 Sb + cm −2).