Experimental characterization of impact ionization coefficients for electrons and holes in GaN grown on bulk GaN substrates

Abstract

Epitaxial p-i-n structures grown on native GaN substrates have been fabricated and used to extract the impact ionization coefficients in GaN. The photomultiplication method has been used to experimentally determine the impact ionization coefficients; avalanche dominated breakdown is confirmed by variable-temperature breakdown measurements. To facilitate photomultiplication measurements of both electrons and holes, the structures include a thin pseudomorphic In0.07Ga0.93N layer on the cathode side of the drift layer. Illumination with 193 nm and 390 nm UV light has been performed on diodes with different intrinsic layer thicknesses. From the measured multiplication characteristics, the impact ionization coefficients of electrons (α) and holes (β) were determined for GaN over the electric field range from 2 MV/cm to 3.7 MV/cm. The results show that for transport along the c-axis, holes dominate the impact ionization process at lower electric field strengths; the impact ionization coefficient of electrons becomes comparable to that of holes (β/α<5) for electric field strengths above 3.3 MV/cm.