Abstract
We experimentally study the performance of directional couplers fabricated in indium-phosphide membrane on silicon (IMOS) technology. We both investigate the validity of the coupled mode theory (CMT) applied to directional coupler structures with high index contrast and study the effect of some different topological choices in device fabrication. In particular, besides the conventional curved structures, we consider ultra sharp corner bends that reduce the footprint. The effect of fabrication tolerances on the different guided mode polarizations is also discussed.
Highlights
Directional couplers (DCs) are one of the fundamental building blocks of photonic integrated circuits (PICs)
This paper aims at presenting some results of such activity performed on couplers realized with a new and promising technological approach, the indium-phosphide membrane on silicon (IMOS) technology
Light from a tunable laser source is provided to an optical component tester
Summary
Directional couplers (DCs) are one of the fundamental building blocks of photonic integrated circuits (PICs). Design and characterization of such components is crucial to exploit new functionalities and to conceive innovative devices for forthcoming applications such as, for example, the upcoming 5G infrastructure In this scenario, the interplay among the design, the fabrication and the characterization steps has become even more important thanks to the expanding of the so called “Generic foundry approach” to PICs fabrication, based on either silicon or in indium-phosphide technologies (see for example [1,2,3]). The interplay among the design, the fabrication and the characterization steps has become even more important thanks to the expanding of the so called “Generic foundry approach” to PICs fabrication, based on either silicon or in indium-phosphide technologies (see for example [1,2,3]) This approach allows users to design their own devices assembling the necessary building blocks only considering the desired functional behavior. Setting up a PDK requires a preliminary intense activity to determine the relationships between the parameters to be inserted in the design equations and the technological ones, in order to obtain full correspondence between the expected and the measured device characteristics
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