Experimental characterization of defect-induced Raman spectroscopy in graphene with BN, ZnO, Al2O3, and TiO2 dopants

Abstract

The introduction of boron nitride (BN), zinc oxide (ZnO), aluminum oxide (Al2O3), and titanium oxide (TiO2) as dopants in pristine graphene leads to the modification of its transport properties, resulting in the production of graphene semiconductors and alteration of its semiconductive characteristics. The achievement of high-quality electronic devices necessitates considering doping and producing a broader energy bandgap in graphene. The optical determination of charge density in intrinsic graphene may be achieved by utilizing the D Raman peak, where an increased charge density is associated with a decreasing peak split. Strong connections have been seen between the energy bandgap (Eg) and the locations of the G and D peaks. Various doping materials exhibit distinct variations and effects on the doping process of graphene. The determination of doping levels in graphene may be achieved with far greater accuracy by observing the ID/IG ratios, compared to the traditional method of measuring the G-band shift with charge. The determination of average crystallite size, as well as the observation of the parameter La, is crucial in comprehending the doping and flaws present in graphene materials that have been manufactured.