Abstract
The study of high dielectric materials has received great attention lately as a key passive component for the application of metal-insulator-metal (MIM) capacitors. In this paper, 50 nm thick Al2O3 thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure. Photolithography and metal lift-off technique were used for processing of the MIM capacitors. Semiconductor Analyzer with probe station was used to perform capacitance-voltage (C-V) characterization with low-medium frequency range. Current-voltage (I-V) characteristics of MIM capacitors were measured on precision source/measurement system. The performance of Al2O3 films of MIM capacitors on glass was examined in the voltage range from −5 to 5 V with a frequency range from 10 kHz to 5 MHz. Au/Al2O3/ITO/Glass MIM capacitors demonstrate a capacitance density of 1.6 fF/μm2at 100 kHz, a loss tangent ~0.005 at 100 kHz and a leakage current of 1.79 × 10−8 A/cm2 at 1 MV/cm (5 V) at room temperature. Au/Al2O3/TiN/Si MIM capacitors demonstrate a capacitance density of 1.5 fF/μm2 at 100 kHz, a loss tangent ~0.007 at 100 kHz and a lower leakage current of 2.93 × 10−10 A/cm2 at 1 MV/cm (5 V) at room temperature. The obtained electrical properties could indicate a promising application of MIM Capacitors.
Highlights
Following the “More than Moore” paradigm, we have witnessed extensive integration of passive components, i.e. capacitors and inductors, for further downscaling of electronics in thin film transistors (TFT), thin film capacitors (TFC) and radio frequency (RF) signal integrated circuit (IC) applications [1]
50 nm thick Al2O3 thin films have been prepared by atomic layer deposition technique on indium tin oxide (ITO) pre-coated glass substrates and titanium nitride (TiN) coated Si substrates with typical MIM capacitor structure
Crystalized phase can be transformed thermodynamically at high temperature, whereas the amorphous and monoclinic phase appears at room temperature which is preferable for semiconductor process
Summary
Following the “More than Moore” paradigm, we have witnessed extensive integration of passive components, i.e. capacitors and inductors, for further downscaling of electronics in thin film transistors (TFT), thin film capacitors (TFC) and radio frequency (RF) signal integrated circuit (IC) applications [1]. In RF and analog ICs applications, MIM capacitors are required to exhibit desirable electrical characteristics including a high capacitance density, low leakage current, and acceptable voltage linearity [3]. The self-limited surface reactions guarantee that the films deposited by ALD grow atomic layer-by-layer which enables a precise control of thickness and a conformal deposition of thin films even on high-aspect-ratio nanostructures. These attractive characteristics have led to the apparent increased industrial interest towards ALD in general, and an explosive growth in the number of scientific publications during the last ten years with ALD technique.
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