Abstract
ABSTRACTWe present experimental and theoretical characterization of InP-based heterostructure integrated thermionic (HIT) coolers. In particular, the effect of doping on overall device performance is characterized. Several thin-film cooler devices have been fabricated and analyzed. The coolers consist of a 1μm thick superlattice structure composed of 25 periods of InGaAs well and InGaAsP (λgap ≈ 1.3μm) barrier layers 10 and 30nm thick, respectively. The superlattice is surrounded by highly-doped InGaAs layers that serve as the cathode and anode. All layers are lattice-matched to the n-type InP substrate. N-type doping of the well layers varies from 1.5×1018cm−3 to 8×1018cm−3 between devices, while the barrier layers are undoped. Device cooling performance was measured at room-temperature. Device current-versus-voltage relationships were measured from 45K to room-temperature. Detailed models of electron transport in superlattice structures were used to simulate device performance. Experimental results indicate that low-temperature electron transport is a strong function of well layer doping and that maximum cooling will decrease as this doping is increased. Theoretical models of both I-V curves and maximum cooling agree well with experimental results. The findings indicate that low-temperature electron transport is useful to characterize potential barriers and energy filtering in HIT coolers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
