Abstract
The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by resonant photoemission spectroscopy (RESPES) and X-ray absorption near-edge spectra (XANES) at the Ni L 2,3-edges. The RESPES spectra are explained with atomic multiplet model, and the XANES data are compared with those calculated with multiple-scattering theory. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In.
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