Experimental and theoretical study of the electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa

Abstract

The electronic structures of Ni 3Al, Ni 3Ga, Ni 3In, and NiGa are studied by resonant photoemission spectroscopy (RESPES) and X-ray absorption near-edge spectra (XANES) at the Ni L 2,3-edges. The RESPES spectra are explained with atomic multiplet model, and the XANES data are compared with those calculated with multiple-scattering theory. The number of 3d holes per Ni atom is calculated for Ni 3Al, Ni 3Ga, and Ni 3In.