Abstract
150 keV niobium implantations were performed at RT in magnesium oxide single crystals. Fluences ranged from 1016 to 1017 ions cm−2. The RBS and XPS techniques allowed the characterization of the implantation profiles and the chemical states of the implants. A comparison between the experimental profiles and the theoretical predictions obtained with TRIM calculations showed no agreement between the values of projected range Rp and ΔRp. A spreading in depth of the ion distribution was observed for Nb implantations. XPS measurements showed that the stable oxidation states of Nh were the 5+ and 4+ states.In order to obtain precise information on the mechanisms of such an anomalous diffusion static lattice calculations of defect parameters are performed for the Nb/MgO system. These calculations allow us to obtain precise information on the stable defects associated with the presence of the metallic impurities in MgO single crystals.
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