Abstract
An InAs/In0.73Ga0.27As/In0.53Ga0.47As/In0.53Al0.235Ga0.235As quantum dashes-in-a-step-well (QDSWELL) structure grown via molecular beam epitaxy has been studied. It is observed that the photoluminescence (PL) emission wavelength of such a structure can be as long as 2.12 μm at room temperature (RT). This is the longest emission wavelength of InAs QDashes to be realized at RT. The electron and hole energy levels of the InAs/In0.73Ga0.27As/In0.53Ga0.47As/In0.53Al0.235Ga0.235As QDSWELL structure have been calculated using effective-mass envelope-function theory. The calculated transition energy EE1-HH1 (from the first electron energy level E1 to the first heavy-hole energy level HH1) agrees with the measured PL emission peak position quite well. It is found that QDSWELL is an alternative structure for realizing lasers with wavelengths beyond 2 μm at RT.
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