Abstract

New solid solution of Na0.5Bi0.5TiO3 with BaFeO3−δ materials were fabricated by sol–gel method. Analysis of X-ray diffraction patterns indicated that BaFeO3−δ materials existed as a well solid solution and resulted in distortion the structure of host Na0.5Bi0.5TiO3 materials. The randomly incorporated Fe and Ba cations in the host Na0.5Bi0.5TiO3 crystal decreased the optical band gap from 3.11 to 2.48 eV, and induced the room-temperature ferromagnetism. Our density-functional theory calculations further suggested that both Ba for Bi/Na-site and Fe dopant, regardless of the substitutional sites, in Na0.5Bi0.5TiO3 lead to the induced magnetism, which is illustrated in terms of the exchange splitting between spin subbands through the crystal field theory and Jahn–Teller distortion effects. Our work proposes a simple method for fabricating lead-free ferroelectric materials with ferromagnetism property for multifunctional applications in smart electronic devices.

Highlights

  • The current research trend in materials science is injecting ferromagnetism into ferroelectric materials to create next-generation smart electronic ­devices[1,2]

  • The picture of ferromagnetism at room temperature of pure ­Na0.5Bi0.5TiO3, a various magnetism sources were injected to lead-free ferroelectric materials which resulted in the room temperature ferromagnetism; such as the O-vacancies, magnetic clusters, or interaction of magnetic cations through oxygen vacancies as intrinsic phenomenon[8,9,10,11]

  • The results provided that the impurities cation and Fe random incorporated with (Bi,Na)-site and the A- and B-site (Ti)-site, respectively, were exhibited the strong ferromagnetism at room temperature where the magnetization were found to great enhancement than that of single transition metal dopants which were possible resulted from co-modification at A-site via alkalineearth and Fe cation at B-site of host ­Na0.5Bi0.5TiO328–30

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Summary

Introduction

The current research trend in materials science is injecting ferromagnetism into ferroelectric materials to create next-generation smart electronic ­devices[1,2]. The double perovskite-type structural materials containing the transition metals (e.g. Bi(Ti0.5Fe0.5)O3−δ, Bi(Ti0.5Mn0.5)O3−δ, Bi(Ti0.5Co0.5)O3−δ, or Bi(Ti0.5Ni0.5)O3−δ) were reported to enhance the magnetic properties of ­Na0.5Bi0.5TiO3 materials when their materials were solid solution into host m­ aterials[39,40,41,42].

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