Abstract
The experimental results of studying the output characteristics of four-contact semiconductor position-sensitive photodetectors fabricated on the basis of photosensitive n-CdSe/mica epitaxial layers are presented. The position sensitivity of layers was theoretically analyzed based on elementary current flow theory and the electric dipole model. It is found that the theoretical characteristics of the coordinate sensitivity of the studied position-sensitive photodetectors correlate with the experimental dependences in terms of both curve shape and positions of the maxima. The results of determining the specific spectral sensitivity indicate the prospects for n-CdSe layers as position-sensitive photodetectors.
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