Abstract
Noise behaviors of the epitaxial Si:P blocked-impurity-band (BIB) detectors have been investigated by experimental and theoretical tools. The device structure and cryogenic testing systems are presented in detail. The dependence of dark current, background current and device noise on bias voltage at temperature of 3.4 K have been measured. The noise components of epitaxial Si:P BIB detectors we have fabricated are analyzed. The results show that under the room-temperature background, the background shot noise can completely dominate device noise, and thus become the limiting factor of the device performance.
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