Abstract
A femtosecond spectral hole burning technique is employed to study the relaxation of nonequilibrium carriers via carrier-carrier and carrier-LO-phonon scattering. Excitation by 70-fs laser pulses several LO phonon energies above the exciton resonance at 10 K in CdSe results in a transient spectral hole that disappears in less than 100 fs. The experiments are compared with a theory that involves numerical evaluation of the semiconductor Bloch equations in the presence of carrier-carrier and carrier-LO phonon scattering.
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