Abstract
The structural and electronic transport properties of Fluorine-doped boron nitride nanosheets (F-BNNSs) were investigated in a back-gate assisted field-effect transistor (FET) to exhibit the recognition of excellent p-type conduction because of Fluorine-doping. It was observed that the drain current was modulated by gating and increased significantly with the applied negative gate voltage, suggesting the predomination of holes. Moreover, theoretical calculations predicts, the formation of acceptor states at the fermi-level, supporting experimental results that fluorinated h-BN acts as a P-type semiconductor. Parameter together, with the ON/OFF ratio, resistivity and holes concentration, was additionally retrieved from the Ids-Vds curves. Our results suggest that such type of novel device description is a valuable approach to disclose the particular properties of fluorine functionalized BNNSs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
