Abstract
Knowledge of the photon energy-dependent photo-elastic (PE) response for a wide range of semiconductors is essential for the development of opto-electronic platforms. Coherent acoustic phonon spectroscopy provides a novel approach to measure depth-dependent optical properties in semiconductor materials with high resolution. Here we report measurements and calculations for bulk silicon in the photon energy range 1.5–3.4 eV. First-principles calculations of the PE spectra show remarkable agreement with the opto-acoustic measurements. These results show promise that this combined experimental and theoretical approach can be effective in characterizing defect induced modification in PE response as a function of depth and defect concentration.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
