Experimental and theoretical assessments of thermal boundary resistance between Bi0.4Sb1.6Te3 thin films and metals

Abstract

An experimental method for measuring thermal boundary resistances of thermoelectrics/metal interfaces using two specially designed multilayer structures is presented. The thermal boundary resistances of Bi0.4Sb1.6Te3 thin films in contact with respective Ni and Ti metal layers are experimentally determined to be 2.65 ± 0.98 × 10−8 and 2.85 ± 1.06 × 10−8 m2K/W. The results agree reasonably well with the predictions from the diffusive mismatch model for Bi0.4Sb1.6Te3/metal interfaces. The effect of phonon transport property of metals on thermal boundary resistance at thermoelectrics/metal interfaces is investigated.