Abstract
Different-indium-content quaternary InAlGaN multi-quantum-well (MQW) structures with emission wavelength around 290–310 nm were grown by metalorganic chemical vapor deposition, and their emission characteristics including the indium-segregation effect were investigated by using not only experimental evaluation but also applying simulation technique, on the basis of the weakly localized exciton model. The value of an effective localized level in the quaternary InAlGaN MQWs was estimated to be around 70 meV from the relationship between photoluminescence lifetimes and photon energies. The simulation study, which was conducted by fitting the emission spectra, also derived the value of around 50 meV. The present study also indicated that the quaternary InAlGaN MQW structures with the indium segregation have clear advantages over ternary AlGaN MQW ones especially in the range of dislocation density larger than approximately 1 × 108 cm−2.
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