Experimental analysis on melting and solidification process of titanium with synchrotron x ray for development of sputter-less SLM

Abstract

The dynamics of melting-solidification of Ti particle as micro analysis were investigated the effect on the substrate temperature by a synchrotron X ray radiation at 30 keV while the laser irradiation, since the surface tension of molten metal depends on the temperature of the substrate. The Ti particle was place on the substrate in a vacuum chamber to evacuate at the pressure of 1 Pa. The laser was vertically irradiated passing through the fused silica window on the Ti particle. Here, the size of a Ti particle and the laser spot diameter were same as 200 micro-meters. A baseplate temperature was varied from 25 to 500 degree Celsius. The contact angle with Ti particle on the SUS304 substrate was 148 degrees. The contact angle was decreased with the increase the substrate temperature while the laser irradiation. At the baseplate temperature of 500 degree Celsius, the contact angle with molten Ti became smallest to 32 degrees from 148 degrees.The dynamics of melting-solidification of Ti particle as micro analysis were investigated the effect on the substrate temperature by a synchrotron X ray radiation at 30 keV while the laser irradiation, since the surface tension of molten metal depends on the temperature of the substrate. The Ti particle was place on the substrate in a vacuum chamber to evacuate at the pressure of 1 Pa. The laser was vertically irradiated passing through the fused silica window on the Ti particle. Here, the size of a Ti particle and the laser spot diameter were same as 200 micro-meters. A baseplate temperature was varied from 25 to 500 degree Celsius. The contact angle with Ti particle on the SUS304 substrate was 148 degrees. The contact angle was decreased with the increase the substrate temperature while the laser irradiation. At the baseplate temperature of 500 degree Celsius, the contact angle with molten Ti became smallest to 32 degrees from 148 degrees.