Abstract
Vertical cavity surface-emitting lasers (VCSELs) were applied to the rapid heating of amorphous Si (a-Si) thin films using high-power infrared illumination at a wavelength of 980 nm, allowing for a high heating rate of up to 200 °C s−1, temperature control of less than 0.1 °C and temporal resolution of 0.1 s. The refined temperature control enabled us to accurately investigate the rapidly evolving period of crystallization in a-Si at a fast speed. The crystallinity and surface morphology were probed using Raman spectroscopy, UV–visible spectroscopy, and atomic force microscopy. The temperature-dependent crystallinity was quantified by fitting the annealing duration time with a sigmoidal curve. Based on the crystallization times in association with the Arrhenius relation, the activation energy for crystallization was calculated to be 2.6 eV, which is in excellent agreement with those obtained for low-temperature solid-phase crystallization.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
