Abstract
Experimental result and theoretical analysis are reported for bias-voltage dependence of oscillation frequency in resonant tunneling diodes (RTDs) integrated with slot antennas. Frequency change of 18 GHz is obtained experimentally for a device with the central oscillation frequency of 470 GHz. The observed frequency change is attributed to the bias-voltage dependence of the transit time of electrons across the RTD layers, which results in a voltage-dependent capacitance added to RTD. Theoretical analysis taking into account this transit time is in reasonable agreement with the observed results. Voltage-controlled RTD oscillators in the terahertz range are expected from the theoretical results. A structure suitable for large frequency change is also discussed briefly.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
