Abstract
First, we review the recent progress on nitride-based light-emitting diodes (LEDs) and discuss the relation between dislocation density and luminous efficiency. We also discuss a method to improve the external quantum efficiency of nitride-based LEDs. Secondly, group-III nitride laser diodes (LDs) which emit from near-ultraviolet to pure-blue are reviewed. Reducing the threading dislocation density can increase the lifetime of nitride LDs. Using an epitaxial lateral overgrowth technique, a dislocation density of the order of 10 5 cm -2 has been obtained. The relation between the lifetime of nitride LDs and the dislocation density are discussed. Finally, near-ultraviolet LDs and pure-blue LDs are described.
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