Abstract
Post deposition annealing is an important processing which can modify the properties of thin films. Even though the properties of Sn doped ZnO (ZnO:Sn) thin films have been extensively studied, here observed an unaccustomed photoluminescence conversion from orange band for the as-deposited film to green band for the films annealed at high temperatures under high vacuum. This strange luminescence property could be attributed to the transition from oxygen rich film to oxygen deficient film under vacuum annealing. The crystallinity and transmittance in the visible and near infrared region improved with increase in annealing temperature. The optical energy gap red-shifted with heat treatment due the stress arisen in the film during annealing. Further, the carrier concentration and mobility increased with annealing but a reduction in mobility was observed for the film annealed at 700°C due to increased ionized impurity scattering. Consequently the resistivity decreased with increase in annealing temperature.
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