Abstract
It is reported that the temperature dependence of luminescence intensity in AI x Ga 1- x As and Cd 1- x Mn x Te obeys the same relation 1/(1+ A exp T / T 0 )) as is observed in amorphous Si:H and chalcogenide glasses. This temperature dependence is well understood by the assumption that a mobility edge exists near the edge of amalgamation-type bands in mixed crystals, and that localized states exist continuously below the mobility edge. The same dependence is observed for the luminescence intensity from bound magnetic polarons in Cd .95 Mn .05 Te.
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