Abstract
The classic van Roosbroeck system describes the carrier transport in semiconductors in a drift diffusion approximation. Its analytic steady state solutions fulfill bounds for some mobility and recombination/generation models. The main goal of this paper is to establish the identical bounds for discrete in space, steady state solutions on 3d boundary conforming Delaunay grids and the classical Scharfetter-Gummel scheme. Together with a uniqueness proof for small applied voltages and the known dissipativity (continuous as well as space and time discrete), these discretization techniques carry over the essential analytic properties to the discrete case. The proofs are of interest for deriving averaging schemes for space or state dependent material parameters, which preserve these qualitative properties, too. To illustrate the properties of the scheme, 1, 4, 16 elementary cells of a modified CoolMOS-like structure are depleted by increasing the applied voltage until steady state avalanche breakdown occurs.
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