Abstract
Silicon nitride has been widely used in microelectronic device fabrication processes for encapsulation, surface passivation and isolation. In this paper we report new applications of plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films that can be deposited at a temperature lower than the soft bake temperature of normal photoresists. Lift-off of the silicon nitride film was carried out using standard positive photoresist. GaAs MESFETs and InP MISFETs with self-aligned gates were successfully fabricated using this lift-off process of low temperature PECVD silicon nitride.
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