Abstract
Understanding the origin and fate of plasma-enhanced chemical vapor deposition (CVD) contaminant particles is a critical issue in semiconductor manufacturing in order to improve thin film deposition on wafer surfaces. Several competing external forces will affect a particle's motion in the plasma field prior to either landing on the wafer or entering the exhaust line. Electrical forces dominate during plasma radio frequency (RF) activation creating regions of potential wells. If trapped, the nucleated particles can continue to grow and gain electron charges until gas or ion drag forces can overcome the potential barrier. Mutual electrostatic repulsion between particles can also cause the traps to leak out contaminants into the exhaust line. In this way, contaminants formed solely in the plasma volume are hypothesized to possess a distinctive size and charge distribution independent of condensation particles originating from gas compression by the oil-based rotary pump. For these reasons, a novel experim...
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