Abstract
An exemplified calculation of migration effects especially stress migration was carried out for a via structure of 90nm node dimensions with narrow and wide lines. The process-induced stress was considered in the simulations. For the first time the mass flux divergence was determined using an user routine which allows the direct calculation of the divgrad(x) terms in the mass flux divergence equation. The investigated cases show a very good correlation between simulation and measurements from literature for the separated calculations of the migration effects. Calculations with a reference temperature of the stress free state are found not to be sufficient for the calculation of the stress distribution as well as mass flux divergence distribution.
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