Abstract
The properties of excitons are examined in two model II-VI heterostructures: the Type-I CdTe/ZnTe system with small valence band offset and the Type-II ZnTe/ZnSe system. The strain induced band offset in the CdTe/ZnTe heterojunction is included to provide the confinement for the heavy hole state. It is found that the large enhancements of exciton binding energy and oscillator strength in the CdTe/ZnTe system are similar to what one finds in systems with a much larger valence band offset. For the ZnTe/ZnSe system, it is found that strong confinement of electrons and holes by the large band offsets can give rise to a very large exciton binding energy for thin heterojunction layers. Also, the mismatch in dielectric constants induces an image charge at the interface, which modifies significantly the exciton Hamiltonian in an asymmetric structure.
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