Abstract
A study has been made of luminescence in weakly (10 15-10 16 cm -3) and heavily (10 18-10 19 cm -3) N-doped GaP crystals induced by 1.78, 2.34 and 3.56 eV photons from Q-switched ruby or neodymium lasers with a KDP crystal for second harmonic generation. The results which were obtained at excitations up to 10 20 cm -3 electron-hole pairs are interpreted as the transitions: single bound excitons, bound excitonic molecules, free excitons in weakly-doped GaP, as well as Auger processes and the formation of a new excitonic state similar to a solid metal with high density of single excitons and excitonic molecules bound to isoelectronic traps in heavily-doped GaP.
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