Abstract
The energy levels of excitons and impurities in external homogeneous magnetic fields are discussed in connection with the details of the electronic band structure. The magnetic field dependence of these levels is studied for all possible field strenghts and the field regimes which are valid for excitons, donors, and acceptors are discussed. Various band structure situations are considered including the cases of band anisotropy and band degeneracy and the results are then used to interpret experimental data in typical group IV and III-V tetrahedral semiconductors. The usefulness of the magnetospectroscopy of excitons and impurities in the determination of several band parameters is stressed. The behaviour of bound excitons in an external magnetic field is also briefly discussed.
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