Abstract
AbstractAbstractauthoren Exciton diffusivity and carrier mobility are key features in determining transport properties of a material. The optimum values required for high‐performance devices are expected to be realized in undoped intrinsic materials. Diamond, one of the emergent high‐mobility materials, has a wide band gap suited for use in power electronics and optoelectronics. For many years, however, mobility measurement for diamond has been limited by carrier freezing at deep impurity levels. Recently, attempts at utilizing photoexcited carriers in undoped diamond have been made in a wide temperature range and various excitation schemes. A series of investigations demonstrated a wealth of intriguing observations such as dominant role of excitons and emergence of low‐temperature anomaly in momentum relaxation. This article highlights recent experimental advances and progresses in understanding transport properties of photoexcited intrinsic diamond.
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