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Abstract
by two Gaussians: low energy subband M1 and high energy one M2 [5]. These subbands with FWHM of 0.44 eV and 0.41 eV are situated at 8.44 eV and 8.64 eV. The subband M2 is due to the exciton self-trapping in the regular lattice while the component M1 is due to the trapping at the lattice defects. The dose dependence of these components under irradiation reflects the changes in defect concentration. In the high-quality crystals, DFIET causes an increase of M1 relative to M2 with increasing dose [5], and electronically induced defect annihilation is hidden. To reveal the process of annihilation, the concentration of initial defects should be high enough. We have succeeded in detecting the defect annihilation with a sample which was grown by fast condensation at Ta 55 K and fast cooling to Ta 6 K. Fig. 1 shows the time evolution of the M-band under irradiation. The intensity of the ‘‘defect” M1-subband decreases with time of irradiation whereas M2-subband grows in intensity. This redistribution of the intensities between the subbands in
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