Abstract
The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.
Highlights
Nitride semiconductors have been running the show for more than quarter of a century after utilizing growth of high quality epilayers on foreign substrates
It has been shown that, in this case, excitonic recombination dynamics are governed by localized states, rather than reflecting the intrinsic properties of the material
We examine the optical properties of GaN/AlGaN multiple quantum wells grown by metal–organic chemical vapor deposition (MOCVD) on free-standing bulk m-plane (1010) GaN substrates
Summary
Follow this and additional works at: http://scholarscompass.vcu.edu/egre_pubs Part of the Electrical and Computer Engineering Commons. This article is available at VCU Scholars Compass: http://scholarscompass.vcu.edu/egre_pubs/194. The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.
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