Abstract
ZnSe-Zn0.78Cd0.22Se MQWs are grown on GaAs(100) substrate by MOCVD. The photoluminescence (PL) under pulsed N2 laser excitation is investigated in detail. The bands observed in PL spectra at 77K are attributed to the n = 1,2 heavy-hole exciton transitions, respectively. In high-density excitation the excitonic recombination is mainly on the exciton interaction, involves the exciton-electron (Ex-x) and exciton-exciton (Ex-Ex) interactions. The stimulated emission due to Ex-Ex scattering is observed at 77K in ZnSe-ZnCdSe MQWs.
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