Abstract
Recently it was found that energetic positronium (Ps) emission from both n- and p-type Si(100) occurs primarily via an exciton-like surface state PsX. The underlying Ps production mechanism was deduced from the observed Ps emission yield and kinetic energy, using laser and thermally generated electrons to populate the PsX state, but not all of the observed effects have been explained. In this brief report we show that excitonic Ps emission also occurs from n-Si(111), but with characteristics that more closely resemble p-Si(100) than n-Si(100). Considering both (100) and (111) crystal orientations may help in the formulation of a more complete theoretical description of the excitonic Ps production mechanism. © 2012 American Physical Society.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
