Abstract
Photoluminescence spectra of ZnSe single crystals doped with Au during a long high-temperature treatment of as-grown crystals in Zn+Au or Se+Au melts are investigated in the temperature range from 83 to 300 K. The Au-doping from Zn+Au melt leads to the formation of both simple defects (Au i donors and Au Zn acceptors) and acceptor associates (Au Zn–Au i). The edge luminescence is attributed to radiative annihilation of Au i and V Se donor-bound excitons. The edge spectra of the crystals doped with Au from Se+Au melt contain the band ascribed to radiative annihilation of Au Zn acceptor-bound excitons.
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