Abstract
Dilute GaAs1−xNx alloys (x<0.3%) were grown by metalorganic vapor phase epitaxy to investigate their photoluminescence and photoluminescence excitation characteristics. Photoluminescence excitation spectra show clear excitonic absorption peaks at low temperatures and their peak energy drastically decreases with increasing nitrogen concentration due to the band-gap bowing in the GaAsN system. This result indicates that the band-gap bowing starts at a nitrogen concentration as low as 1018 cm−3, and its bowing parameter is −22 eV. According to this band-gap bowing, the GaAsN alloys show two photoluminescence lines whose peak energy decreases with increasing nitrogen concentration. Their dependence on the nitrogen concentration suggests that these lines correspond to excitonic and carbon-related transitions in the GaAsN alloy.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.