Abstract
AbstractThin films of epitaxial CuInS2 were deposited on a GaAs substrate at a temperature of 500 ºC by the pulse‐laser‐deposition method. Surface and cross‐section scanning electron microscopy (SEM) images were taken for all the films, with thicknesses estimated to range between 0.5‐1 μm. X‐ray diffraction (XRD) and Raman scattering confirmed the chalcopyrite structure of the films. For a film deposited by a pulse of energy density 0.8 J/cm2, free exciton and bound exciton emissions at 77 K were observed using photoluminescence (PL). The exciton emissions appear only at specific points in a PL‐intensity mapping. In addition, for the points with excitonic emission the composition ratio of the Cu and In was found to be very close to unity compared to other areas without emissions. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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