Abstract
We have investigated the optical transitions in Be $\ensuremath{\delta}$-doped $\mathrm{Ga}\mathrm{As}∕\mathrm{Al}\mathrm{As}$ multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron--acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated.
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