Abstract
The nonlinear light absorption in GaSe and InSe layered crystals in the exciton resonance region and its time evolution have been studied experimentally under high-density optical excitation. The observed variation of the absorption coefficient with time and excitation intensity is due not only to exciton-exciton interaction and the shielding of excitons by nonequilibrium carrier plasma but also to kinetic and relaxation-recombination processes in these materials.
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