Abstract
We present experimental evidence for the existence of excitonic states above the excitonic Mott transition in both highly doped and highly excited silicon. Previous limitations to resolve the fundamental absorption edge of Si at dense carrier plasmas are overcome employing a novel spatially and time-resolved spectroscopy. We show that the obtained density dependent excess absorption at 75 K represents an excitonic enhancement effect, which is attributed to persisting many-body interactions.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
