Abstract
The luminescence spectra of GaAs xP 1-x:N (0<×<0.4) are studied at T=2K, by selective excitation into the nitrogen-bound exciton band. The main spectral features are analyzed in terms of acoustic phonon-assisted exciton transfer between localized states. The energy of the excitonic mobility edge is determined spectroscopically and is found to vary as x(1-x).
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