Abstract
The ground-state exciton binding energy and interband emission wavelength in the direct-gap Ge / SiGe quantum dot (QD) are investigated by means of a variational approach, within the framework of effective-mass approximation. Numerical results show that the ground-state exciton binding energy has a maximum value with increasing quantum size of the direct-gap Ge / SiGe QD. The interband emission wavelength is increased when the QD size is increased. Our results indicate the direct-gap Ge / SiGe QD can be applied for long wavelength optoelectronic devices.
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Schedule a callMore From: Modern physics letters. B, Condensed matter physics, statistical physics, applied physics
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