Abstract
Excitonic properties of a compound semiconductor from group III-V and group II-VI materials are studied applying external perturbations. The simultaneous effects of pressure and temperature on exciton energies in an InP/ZnS quantum dot (core/shell) are found taking into account the ratio of radius of core/shell dot. The results bring out that the radiative lifetime enhances monotonically when the ratio of radius of core to shell quantum dot increases and it reaches a saturation value when Rc/Rs → 1 and the radiative recombination lifetime enhances upto 9 ns. The results can be applied for tailoring the excitonic optical transitions in nano-optical devices.
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