Abstract
A theoretical investigation has been made on Semiconductor to Metal transition (SMT) due to direct excitons (DXs) i.e Exciton Mott Transition (EMT) by observing exciton diamagnetic susceptibility in GaAs/Al0.3Ga0.7As Square Quantum Wells (SQWs). Variation method is employed to analyse Binding Energy (BE), spatial extension of constituent particles and diamagnetic susceptibility (χDia) through optimizing <Hmin> using inseparable trial wavefunctions. Exchange and correlation effects of excitons are considered through Hartree-Fock (HF) dielectric screening. As the density increases, a gradual variation of exciton BE and an abrupt change in χDia are observed at some critical concentrations manifesting Mott transition. Moreover, these critical concentrations of excitons shift to lower values as well width is increased. Indeed, χDia is a great tool to manifest the exciton breaking in nanostructures and it may be useful to demonstrate SMT and metal insulator transitions (MITs). The critical concentration for EMT of DXs in QW lies in the range of 1015 to 1018 cm-3 as guided by Mott Criterion.
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