Abstract
Photoluminescence of compensated and uncompensated epitaxial SiC-6H layers has been investigated. The layers were grown by container-free LPE and contained different concentrations of nitrogen (donor) and aluminum (acceptor). It is proposed that the high-temperature (500–900 K) photoluminescence (PL) of SiC-6H is mainly due to radiative annihilation of the free exciton. It is found that at high temperature, the shape of the exciton band is gaussian. Factors affecting the exciton band width are discussed. In closely compensated samples, there is a shift of the exciton luminescence band to lower energies. Exciton localization by the potential fluctuations is supposed. The free exciton luminescence intensity is found to depend markedly on the Al concentration. A decay model of the exciton in the vicinity of an Al acceptor in compensated silicon carbide is proposed.
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