Abstract
We present a study of the exciton localization and the interisland exciton diffusion in interrupted-growth thin GaAs–AlAs quantum wells (QW), by photoluminescence (PL). These quantum wells include extended monolayer flat regions. We have shown that, for a given position on the sample, the exciton localization is stronger in the wide well regions than in the narrow well regions. We have also developed a quantitative model, of independently distributed cylindrical holes at the AlAs/GaAs interface, to explain the evolution of the interisland exciton diffusion as a function of temperature and have obtained the average value of the narrow regions extension and the ratio of the area of the wide regions to the area of the narrow regions.
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